dn3525 features high input impedance low input capacitance fast switching speeds low on resistance free from secondary breakdown low input and output leakage applications normally-on switches solid state relays converters constant current sources power supply circuits telecom ? ? ? ? ? ? ? ? ? ? ? ? general description the supertex dn3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. absolute maximum ratings parameter value drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c soldering temperature* 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. *distance of 1.6mm from case for 10 seconds. ordering information bv dsx / bv dgx r ds(on) (max) i dss (min) package options to-243aa 1 250v 6.0 300ma dn3525n8 DN3525N8-G -g indicates package is rohs compliant (green) notes: 1 same as sot-89. n-channel depletion-mode vertical dmos fets pin con? guration to-243aa (top view) g d s d product marking for to-243aa: where = 2-week alpha date code dn5c
2 dn3525 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v electrical characteristics (@25 o c unless otherwise speci? ed) symbol parameter min typ max units conditions bv dsx drain-to-source breakdown voltage 250 - - v v gs = -5.0v, i d = 100a v gs(off) gate-to-source off voltage -1.5 - -3.5 v v ds = 15v, i d = 1.0ma v gs(off) change in v gs(off) with temperature - - 4.5 mv/ o cv ds = 15v, i d = 1.0ma i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current - - 1.0 a v ds = max rating, v gs = -5.0v - - 1.0 ma v ds = 0.8 max rating, v gs = -5.0v, t a = 125 o c i dss saturated drain-to-source current 300 - - ma v gs = 0v, v ds = 15v r ds(on) static drain-to-source on-state resistance - - 6.0 v gs = 0v, i d = 200ma r ds(on) change in r ds(on) with temperature - - 1.1 %/ o cv gs = 0v, i d = 200ma g fs forward transconductance 225 - - mmho v ds = 10v, i d = 150ma c iss input capacitance - 270 350 pf v gs = -5.0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 20 60 c rss reverse transfer capacitance - 5.0 20 t d(on) turn-on delay time - - 20 ns v dd = 25v, i d = 150ma, r gen = 25?, v gs = 0v to -10v t r rise time - - 25 t d(off) turn-off delay time - - 25 t f fall time - - 40 v sd diode forward voltage drop - - 1.8 v v gs = -5.0v, i sd = 150ma t rr reverse recovery time - 800 - ns v gs = -5.0v, i sd = 150ma notes: 1.all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2.all a.c. parameters sample tested. thermal characteristics package i d (continuous) 1 i d (pulsed) power dissipation @t a = 25 o c jc ( o c/w) ja ( o c/w) i dr 1 i drm to-243aa 360ma 1.0a 1.6w 2 15 78 2 360ma 1.0a notes: 1. i d (continuous) is limited by max rated t j . 2. mounted on fr4 board, 25mm x 25mm x 1.57mm. signi? cant p d increase possible on ceramic substrate. switching waveforms and test circuit
3 dn3525 typical performance curves i d (amperes) v ds (volts) output characteristics saturation characteristics i d (amperes) v ds (volts) g fs (siemens) i d (milliamperes) transconductance vs. drain current power dissipation vs. ambient temperature pd (watts) t a ( o c) maximum rated safe operating area i d (amperes) v ds (volts) thermal response characteristics thermal resistance (normalized) t p (seconds) 1 1000 100 10 to-243aa (pulsed) t a =25 o c 0.001 0.01 0.1 10 to-243aa (dc) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1 to-243aa t a = 25 o c p d = 1.6w v gs = +2v -0.5v 0v 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 to-243aa -1v -0.8v 0 50 100 150 200 250 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v gs =+2v v gs =0v v gs =-0.5v v gs =-1.5v v gs =-2v v gs =-0.8v v gs =-1v 0246810 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -1.5v -2v 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 t a =25 o c t a =125 o c t a =-55 o c v ds =10v 1.0
4 dn3525 typical performance curves (cont.) 0 1000 2000 3000 4000 5000 -5 -4 -3 -2 -1 0 1 2 3 0 10203040 0 50 100 150 200 250 300 350 -3 -2 -1 0 1 2 0 400 800 1200 1600 2000 r ds(on) (ohms) i d (amperes) on resistance vs. drain current v gs(off) and r ds(on) w/ temperature v gs(off) (normalized) t j ( o c) r ds(on) (normalized) transfer characteristics i d (milliamperes) v gs (volts) -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 i d = 100a v gs = -5v v ds = 10v t a = -55 o c t a = 25 o c t a = 125 o c v gs = -5v c iss c oss c rss i d = 200ma v ds =30v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 v gs = 0v t j = 25 o c -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs(off) @ 1ma, 15v r ds(on) @ 0v, 200ma bv dsv (normalized) t j ( o c) bv dsv variation with temperature capacitance vs. drain source voltage c (picofarads) v ds (volts) gate drive dynamic characteristics q (picocoulombs) g v gs (volts)
5 doc.# dsfp-dn3525 a012307 dn3525 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) exclusion zone no vias/traces in this area. shape of pad may vary. 3.00 bsc 1.50 bsc 0.5 0.06 0.42 0.06 1.05 0.15 2.45 0.15 4.10 0.15 1.72 0.10 4.50 0.10 2.21 0.08 0.40 0.05 1.50 0.10 notes: all dimensions are in millimeters; all angles in degrees. top view side view bottom view 3-lead to-243aa (sot-89) surface mount package (n8)
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